Abstract: Cylindrical gate all around (GAA) MOSFET is a drastic invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling without hindering the device performance.In this work, electrical characteristics of cylindrical GAA (CGAA) MOSFET at 50nm channel length (Lg), 10nm channel thickness (tsi) are systematically analysed. Various electrical characteristics such as On current (ION), subthreshold leakage current (IOFF), the threshold voltage (Vth), DIBL are calculated and analysed at various device design parameters.All the device performances of Cylindrical GAA MOSFETs are investigated through Atlas device simulator from Silva co.

Keywords: Cylindrical gate all around (GAA) MOSFET, subthreshold leakage current (IOFF),